Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79K
نویسندگان
چکیده
Photoluminescence spectroscopy at 79K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3W cm –100 kWcm . Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 10 cm 3 and [P] below 8 10 cm .
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